Microfocus x-ray study of selective area epitaxy of SiGe on Si.

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Title: Microfocus x-ray study of selective area epitaxy of SiGe on Si.
Authors: Giannakopoulos, K. P., Roth, S., Burghammer, M.
Source: Journal of Applied Physics; January 1 2003, Vol. 93 Issue 1, p259-264, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500974338
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Microfocus x-ray study of selective area epitaxy of SiGe on Si.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 1 2003, Vol. 93 Issue 1, p259-264, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500974338
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1527214
    Languages:
      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 259
    Titles:
      – TitleFull: Microfocus x-ray study of selective area epitaxy of SiGe on Si.
        Type: main
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            NameFull: Giannakopoulos, K. P.
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            NameFull: Roth, S.
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            NameFull: Burghammer, M.
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            – D: 01
              M: 01
              Text: January 1 2003
              Type: published
              Y: 2003
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              Value: 93
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