View in EDS

High Bandwidth and Low-Leakage Current InP-In0.53Ga0.47As-InP DBHTs on GaAs Substrates.

Saved in:
Bibliographic Details
Title: High Bandwidth and Low-Leakage Current InP-In0.53Ga0.47As-InP DBHTs on GaAs Substrates.
Authors: Kim, Y. M., Griffith, Z., Rodwell, M. J. W.
Source: IEEE Electron Device Letters; Apr2004, Vol. 25 Issue 4, p170-172, 3p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500976532
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: High Bandwidth and Low-Leakage Current InP-In0.53Ga0.47As-InP DBHTs on GaAs Substrates.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kim%2C+Y%2E+M%2E%22">Kim, Y. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Griffith%2C+Z%2E%22">Griffith, Z.</searchLink><br /><searchLink fieldCode="AU" term="%22Rodwell%2C+M%2E+J%2E+W%2E%22">Rodwell, M. J. W.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Apr2004, Vol. 25 Issue 4, p170-172, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500976532
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2004.825198
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 170
    Titles:
      – TitleFull: High Bandwidth and Low-Leakage Current InP-In0.53Ga0.47As-InP DBHTs on GaAs Substrates.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kim, Y. M.
      – PersonEntity:
          Name:
            NameFull: Griffith, Z.
      – PersonEntity:
          Name:
            NameFull: Rodwell, M. J. W.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2004
              Type: published
              Y: 2004
          Identifiers:
            – Type: issn-print
              Value: 07413106
          Numbering:
            – Type: volume
              Value: 25
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: IEEE Electron Device Letters
              Type: main
ResultId 1