APA (7th ed.) Citation

Prégaldiny, F., Lallement, c., & Mathiot, D. (2004). Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model. Solid-State Electronics, 48(5), 781. https://doi.org/10.1016/j.sse.2003.12.010

Chicago Style (17th ed.) Citation

Prégaldiny, Fabien, christophe Lallement, and Daniel Mathiot. "Accounting for Quantum Mechanical Effects from Accumulation to Inversion, in a Fully Analytical Surface-potential-based MOSFET Model." Solid-State Electronics 48, no. 5 (2004): 781. https://doi.org/10.1016/j.sse.2003.12.010.

MLA (9th ed.) Citation

Prégaldiny, Fabien, et al. "Accounting for Quantum Mechanical Effects from Accumulation to Inversion, in a Fully Analytical Surface-potential-based MOSFET Model." Solid-State Electronics, vol. 48, no. 5, 2004, p. 781, https://doi.org/10.1016/j.sse.2003.12.010.