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Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.

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Title: Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.
Authors: Prégaldiny, Fabien, Lallement, christophe, Mathiot, Daniel
Source: Solid-State Electronics; May2004, Vol. 48 Issue 5, p781-787, 7p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500981051
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; May2004, Vol. 48 Issue 5, p781-787, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500981051
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2003.12.010
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 781
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      – TitleFull: Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.
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            NameFull: Prégaldiny, Fabien
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            NameFull: Lallement, christophe
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            NameFull: Mathiot, Daniel
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              Text: May2004
              Type: published
              Y: 2004
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              Value: 48
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