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Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.

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Bibliographic Details
Title: Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.
Authors: Prégaldiny, Fabien, Lallement, christophe, Mathiot, Daniel
Source: Solid-State Electronics; May2004, Vol. 48 Issue 5, p781-787, 7p
Database: Applied Science & Technology Source
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