InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.

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Bibliographic Details
Title: InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.
Authors: Griffith, Z., Dahlström, M., Urteaga, M.
Source: IEEE Electron Device Letters; May2004, Vol. 25 Issue 5, p250-252, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2004.827288