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InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.

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Bibliographic Details
Title: InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.
Authors: Griffith, Z., Dahlström, M., Urteaga, M.
Source: IEEE Electron Device Letters; May2004, Vol. 25 Issue 5, p250-252, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500987961
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; May2004, Vol. 25 Issue 5, p250-252, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500987961
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      – Type: doi
        Value: 10.1109/LED.2004.827288
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 250
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      – TitleFull: InGaAs-InP Mesa DHBTs With Simultaneously High fτ and fmax and Low Ccb/Ic Ratio.
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            NameFull: Griffith, Z.
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            NameFull: Dahlström, M.
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              M: 05
              Text: May2004
              Type: published
              Y: 2004
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