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Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)

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Bibliographic Details
Title: Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)
Authors: Ferrari, S., Scarel, G.
Source: Journal of Applied Physics; 7/1/2004, Vol. 96 Issue 1, p144-149, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501007250
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 7/1/2004, Vol. 96 Issue 1, p144-149, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501007250
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.1753080
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 144
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      – TitleFull: Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)
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            NameFull: Ferrari, S.
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              M: 07
              Text: 7/1/2004
              Type: published
              Y: 2004
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              Value: 96
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