Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

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Bibliographic Details
Title: Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
Authors: Cook, T. E. Jr, Fulton, C. C., Mecouch, W. J.
Source: Journal of Applied Physics; April 1 2003, Vol. 93 Issue 7, p3995-4004, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501016327
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 1 2003, Vol. 93 Issue 7, p3995-4004, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501016327
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.1559424
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 3995
    Titles:
      – TitleFull: Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
        Type: main
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            NameFull: Cook, T. E.
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            NameFull: Fulton, C. C.
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            NameFull: Mecouch, W. J.
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            – D: 01
              M: 04
              Text: April 1 2003
              Type: published
              Y: 2003
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              Value: 93
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              Value: 7
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            – TitleFull: Journal of Applied Physics
              Type: main
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