Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum-well lasers.
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| Title: | Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum-well lasers. |
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| Authors: | Alexandropoulos, D., Adams, M. J. |
| Source: | IEE Proceedings -- Optoelectronics; April 2003, Vol. 150 Issue 2, p105-109, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501017708 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501017708 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1049/ip-opt:20030385 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 105 Titles: – TitleFull: Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum-well lasers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Alexandropoulos, D. – PersonEntity: Name: NameFull: Adams, M. J. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: April 2003 Type: published Y: 2003 Identifiers: – Type: issn-print Value: 13502433 Numbering: – Type: volume Value: 150 – Type: issue Value: 2 Titles: – TitleFull: IEE Proceedings -- Optoelectronics Type: main |
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