Effect of growth rate and gallium source on GaAsN.
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| Title: | Effect of growth rate and gallium source on GaAsN. |
|---|---|
| Authors: | Kurtz, Sarah, Geisz, J. F., Keyes, B. M. |
| Source: | Applied Physics Letters; April 21 2003, Vol. 82 Issue 16, p2634-2636, 3p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501025316 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501025316 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.1565500 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 2634 Titles: – TitleFull: Effect of growth rate and gallium source on GaAsN. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kurtz, Sarah – PersonEntity: Name: NameFull: Geisz, J. F. – PersonEntity: Name: NameFull: Keyes, B. M. IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 04 Text: April 21 2003 Type: published Y: 2003 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 82 – Type: issue Value: 16 Titles: – TitleFull: Applied Physics Letters Type: main |
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