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Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy.

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Bibliographic Details
Title: Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy.
Authors: Kerr, L. L., Li, Sheng S., Johnston, S. W.
Source: Solid-State Electronics; Sep2004, Vol. 48 Issue 9, p1579-1586, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501027065
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy.
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      – Type: doi
        Value: 10.1016/j.sse.2004.03.005
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1579
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      – TitleFull: Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy.
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            NameFull: Kerr, L. L.
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            NameFull: Li, Sheng S.
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            NameFull: Johnston, S. W.
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              M: 09
              Text: Sep2004
              Type: published
              Y: 2004
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              Value: 48
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              Value: 9
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