APA (7th ed.) Citation

Matlock, D. M., Zvanut, M. E., & Wang, H. (2005). The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy. Journal of Electronic Materials, 34(1), 34. https://doi.org/10.1007/s11664-005-0177-3

Chicago Style (17th ed.) Citation

Matlock, D. M., M. E. Zvanut, and Haiyan Wang. "The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy." Journal of Electronic Materials 34, no. 1 (2005): 34. https://doi.org/10.1007/s11664-005-0177-3.

MLA (9th ed.) Citation

Matlock, D. M., et al. "The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy." Journal of Electronic Materials, vol. 34, no. 1, 2005, p. 34, https://doi.org/10.1007/s11664-005-0177-3.