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The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.

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Title: The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.
Authors: Matlock, D. M., Zvanut, M. E., Wang, Haiyan
Source: Journal of Electronic Materials; January 2005, Vol. 34 Issue 1, p34-39, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501076639
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.
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  Data: <searchLink fieldCode="AU" term="%22Matlock%2C+D%2E+M%2E%22">Matlock, D. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Zvanut%2C+M%2E+E%2E%22">Zvanut, M. E.</searchLink><br /><searchLink fieldCode="AU" term="%22Wang%2C+Haiyan%22">Wang, Haiyan</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; January 2005, Vol. 34 Issue 1, p34-39, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501076639
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-005-0177-3
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 34
    Titles:
      – TitleFull: The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.
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            NameFull: Matlock, D. M.
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            NameFull: Zvanut, M. E.
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            NameFull: Wang, Haiyan
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            – D: 01
              M: 01
              Text: January 2005
              Type: published
              Y: 2005
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              Value: 34
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