Nakhmedov, E. P., Wieczorek, K., & Burghardt, H. (2005). Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures. Journal of Applied Physics, 98(2), 024506. https://doi.org/10.1063/1.1985976
Chicago Style (17th ed.) CitationNakhmedov, E. P., K. Wieczorek, and H. Burghardt. "Quantum-mechanical Study of the Direct Tunneling Current in Metal-oxide-semiconductor Structures." Journal of Applied Physics 98, no. 2 (2005): 024506. https://doi.org/10.1063/1.1985976.
MLA (9th ed.) CitationNakhmedov, E. P., et al. "Quantum-mechanical Study of the Direct Tunneling Current in Metal-oxide-semiconductor Structures." Journal of Applied Physics, vol. 98, no. 2, 2005, p. 024506, https://doi.org/10.1063/1.1985976.
Warning: These citations may not always be 100% accurate.