Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures.

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Bibliographic Details
Title: Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures.
Authors: Nakhmedov, E. P., Wieczorek, K., Burghardt, H.
Source: Journal of Applied Physics; July 15 2005, Vol. 98 Issue 2, p024506-024506, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501112372
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 15 2005, Vol. 98 Issue 2, p024506-024506, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501112372
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1985976
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 024506
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      – TitleFull: Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures.
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            NameFull: Nakhmedov, E. P.
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            NameFull: Wieczorek, K.
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            NameFull: Burghardt, H.
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              M: 07
              Text: July 15 2005
              Type: published
              Y: 2005
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              Value: 98
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