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Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI.

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Bibliographic Details
Title: Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI.
Authors: Avenier, Grégory, Frégonèse, Sébastien, Chevalier, Pascal
Source: IEEE Transactions on Electron Devices; February 2008, Vol. 55 Issue 2, p585-593, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501210284
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI.
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  Data: <searchLink fieldCode="AU" term="%22Avenier%2C+Grégory%22">Avenier, Grégory</searchLink><br /><searchLink fieldCode="AU" term="%22Frégonèse%2C+Sébastien%22">Frégonèse, Sébastien</searchLink><br /><searchLink fieldCode="AU" term="%22Chevalier%2C+Pascal%22">Chevalier, Pascal</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; February 2008, Vol. 55 Issue 2, p585-593, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501210284
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TED.2007.912361
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 9
        StartPage: 585
    Titles:
      – TitleFull: Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI.
        Type: main
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            NameFull: Avenier, Grégory
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            NameFull: Frégonèse, Sébastien
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            NameFull: Chevalier, Pascal
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            – D: 01
              M: 02
              Text: February 2008
              Type: published
              Y: 2008
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              Value: 55
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              Value: 2
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            – TitleFull: IEEE Transactions on Electron Devices
              Type: main
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