Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.

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Bibliographic Details
Title: Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.
Authors: Samsudin, K., Cheng, B., Brown, A. R.
Source: Solid-State Electronics; April 2006, Vol. 50 Issue 4, p660-667, 8p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/j.sse.2006.03.019