Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.

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Bibliographic Details
Title: Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.
Authors: Samsudin, K., Cheng, B., Brown, A. R.
Source: Solid-State Electronics; April 2006, Vol. 50 Issue 4, p660-667, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501237488
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501237488
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2006.03.019
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 660
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      – TitleFull: Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants.
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            NameFull: Samsudin, K.
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            NameFull: Cheng, B.
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            NameFull: Brown, A. R.
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              Text: April 2006
              Type: published
              Y: 2006
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              Value: 50
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              Value: 4
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            – TitleFull: Solid-State Electronics
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