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The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs.

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Title: The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs.
Authors: Rodriguez, Noel, Gámiz, Francisco, Clerc, Raphael
Source: IEEE Electron Device Letters; June 2008, Vol. 29 Issue 6, p628-631, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501268183
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs.
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  Data: <searchLink fieldCode="AU" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><br /><searchLink fieldCode="AU" term="%22Gámiz%2C+Francisco%22">Gámiz, Francisco</searchLink><br /><searchLink fieldCode="AU" term="%22Clerc%2C+Raphael%22">Clerc, Raphael</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; June 2008, Vol. 29 Issue 6, p628-631, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501268183
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2008.921209
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 628
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      – TitleFull: The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs.
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            NameFull: Rodriguez, Noel
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            NameFull: Gámiz, Francisco
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            NameFull: Clerc, Raphael
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            – D: 01
              M: 06
              Text: June 2008
              Type: published
              Y: 2008
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              Value: 29
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            – TitleFull: IEEE Electron Device Letters
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