Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.

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Bibliographic Details
Title: Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.
Authors: Amelifard, Behnram, Fallah, Farzan, Pedram, Massoud
Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems; July 2008, Vol. 16 Issue 7, p851-860, 10p
Database: Applied Science & Technology Source
Description
ISSN:10638210
DOI:10.1109/TVLSI.2008.2000459