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Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.

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Bibliographic Details
Title: Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.
Authors: Amelifard, Behnram, Fallah, Farzan, Pedram, Massoud
Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems; July 2008, Vol. 16 Issue 7, p851-860, 10p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501283134
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.
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  Data: <searchLink fieldCode="AU" term="%22Amelifard%2C+Behnram%22">Amelifard, Behnram</searchLink><br /><searchLink fieldCode="AU" term="%22Fallah%2C+Farzan%22">Fallah, Farzan</searchLink><br /><searchLink fieldCode="AU" term="%22Pedram%2C+Massoud%22">Pedram, Massoud</searchLink>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501283134
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1109/TVLSI.2008.2000459
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 851
    Titles:
      – TitleFull: Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology.
        Type: main
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            NameFull: Amelifard, Behnram
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            NameFull: Fallah, Farzan
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            NameFull: Pedram, Massoud
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          Dates:
            – D: 01
              M: 07
              Text: July 2008
              Type: published
              Y: 2008
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              Value: 16
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              Value: 7
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            – TitleFull: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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