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Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.

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Title: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
Authors: Fan, Ching-Lin, Lai, Hui-Lung, Yang, Tsung-Hsien
Source: IEEE Electron Device Letters; July 2006, Vol. 27 Issue 7, p576-578, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501285681
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
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  Data: <searchLink fieldCode="AU" term="%22Fan%2C+Ching-Lin%22">Fan, Ching-Lin</searchLink><br /><searchLink fieldCode="AU" term="%22Lai%2C+Hui-Lung%22">Lai, Hui-Lung</searchLink><br /><searchLink fieldCode="AU" term="%22Yang%2C+Tsung-Hsien%22">Yang, Tsung-Hsien</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; July 2006, Vol. 27 Issue 7, p576-578, 3p
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2006.877296
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 3
        StartPage: 576
    Titles:
      – TitleFull: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
        Type: main
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          Name:
            NameFull: Fan, Ching-Lin
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            NameFull: Lai, Hui-Lung
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            NameFull: Yang, Tsung-Hsien
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            – D: 01
              M: 07
              Text: July 2006
              Type: published
              Y: 2006
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              Value: 27
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              Value: 7
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            – TitleFull: IEEE Electron Device Letters
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