Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.

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Bibliographic Details
Title: Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.
Authors: Darmawan, P., Chan, M. Y., Zhang, T.
Source: Applied Physics Letters; August 11 2008, Vol. 93 Issue 6, p062901-062901, 1p
Database: Applied Science & Technology Source
Description
ISSN:00036951