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Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.

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Bibliographic Details
Title: Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.
Authors: Darmawan, P., Chan, M. Y., Zhang, T.
Source: Applied Physics Letters; August 11 2008, Vol. 93 Issue 6, p062901-062901, 1p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501301339
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PubType: Academic Journal
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  Data: Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; August 11 2008, Vol. 93 Issue 6, p062901-062901, 1p
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        Text: English
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        StartPage: 062901
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      – TitleFull: Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.
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              Text: August 11 2008
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