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Resistive Switching Mechanisms of V-Doped SrZrO3 Memory Films.

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Title: Resistive Switching Mechanisms of V-Doped SrZrO3 Memory Films.
Authors: Lin, Chun-Chieh, Tu, Bing-Chung, Lin, Chao-Cheng
Source: IEEE Electron Device Letters; September 2006, Vol. 27 Issue 9, p725-727, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501313194
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Resistive Switching Mechanisms of V-Doped SrZrO3 Memory Films.
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  Data: <searchLink fieldCode="AU" term="%22Lin%2C+Chun-Chieh%22">Lin, Chun-Chieh</searchLink><br /><searchLink fieldCode="AU" term="%22Tu%2C+Bing-Chung%22">Tu, Bing-Chung</searchLink><br /><searchLink fieldCode="AU" term="%22Lin%2C+Chao-Cheng%22">Lin, Chao-Cheng</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; September 2006, Vol. 27 Issue 9, p725-727, 3p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/LED.2006.880660
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 725
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      – TitleFull: Resistive Switching Mechanisms of V-Doped SrZrO3 Memory Films.
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            NameFull: Lin, Chun-Chieh
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            NameFull: Tu, Bing-Chung
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            NameFull: Lin, Chao-Cheng
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            – D: 01
              M: 09
              Text: September 2006
              Type: published
              Y: 2006
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              Value: 27
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              Value: 9
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            – TitleFull: IEEE Electron Device Letters
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