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Optoelectronic properties of GaN epilayers in the region of yellow luminescence.

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Bibliographic Details
Title: Optoelectronic properties of GaN epilayers in the region of yellow luminescence.
Authors: Grazzi, C., Strunk, H. P., Castaldini, A.
Source: Journal of Applied Physics; October 1 2006, Vol. 100 Issue 7, p073711-073711, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501322415
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Optoelectronic properties of GaN epilayers in the region of yellow luminescence.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501322415
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      – Type: doi
        Value: 10.1063/1.2356780
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 073711
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      – TitleFull: Optoelectronic properties of GaN epilayers in the region of yellow luminescence.
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            NameFull: Grazzi, C.
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            NameFull: Strunk, H. P.
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            NameFull: Castaldini, A.
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              Text: October 1 2006
              Type: published
              Y: 2006
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