Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates.

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Bibliographic Details
Title: Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates.
Authors: Roder, C., Einfeldt, S., Figge, S.
Source: Journal of Applied Physics; November 15 2006, Vol. 100 Issue 10, p103511-103511, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501345116
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 15 2006, Vol. 100 Issue 10, p103511-103511, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501345116
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.2386940
    Languages:
      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 103511
    Titles:
      – TitleFull: Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates.
        Type: main
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            NameFull: Roder, C.
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            NameFull: Einfeldt, S.
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            NameFull: Figge, S.
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              Text: November 15 2006
              Type: published
              Y: 2006
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              Value: 100
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              Value: 10
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