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Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.

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Title: Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.
Authors: Kim, S. M., Yuen, H. B., Hatami, F.
Source: Journal of Electronic Materials; December 2008, Vol. 37 Issue 12, p1774-1779, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501350105
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PubType: Academic Journal
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  Data: Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Kim%2C+S%2E+M%2E%22">Kim, S. M.</searchLink><br /><searchLink fieldCode="AU" term="%22Yuen%2C+H%2E+B%2E%22">Yuen, H. B.</searchLink><br /><searchLink fieldCode="AU" term="%22Hatami%2C+F%2E%22">Hatami, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; December 2008, Vol. 37 Issue 12, p1774-1779, 6p
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        Value: 10.1007/s11664-008-0472-x
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 1774
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      – TitleFull: Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.
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            NameFull: Kim, S. M.
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            NameFull: Yuen, H. B.
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            NameFull: Hatami, F.
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              Text: December 2008
              Type: published
              Y: 2008
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