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Organic small molecule field-effect transistors with Cytop gate dielectric: Eliminating gate bias stress effects.

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Bibliographic Details
Title: Organic small molecule field-effect transistors with Cytop gate dielectric: Eliminating gate bias stress effects.
Authors: Kalb, W. L., Mathis, T., Haas, S.
Source: Applied Physics Letters; February 26 2007, Vol. 90 Issue 9, p092104-092104, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501388839
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Organic small molecule field-effect transistors with Cytop gate dielectric: Eliminating gate bias stress effects.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; February 26 2007, Vol. 90 Issue 9, p092104-092104, 1p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.2709894
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      – Code: eng
        Text: English
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        StartPage: 092104
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      – TitleFull: Organic small molecule field-effect transistors with Cytop gate dielectric: Eliminating gate bias stress effects.
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            NameFull: Kalb, W. L.
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            NameFull: Mathis, T.
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              Text: February 26 2007
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              Y: 2007
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