Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors.
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| Title: | Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors. |
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| Authors: | He, Yuhui, Zhao, Yuning, Fan, Chun |
| Source: | IEEE Transactions on Electron Devices; June 2009, Vol. 56 Issue 6, p1199-1203, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501441294 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22He%2C+Yuhui%22">He, Yuhui</searchLink><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Yuning%22">Zhao, Yuning</searchLink><br /><searchLink fieldCode="AU" term="%22Fan%2C+Chun%22">Fan, Chun</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; June 2009, Vol. 56 Issue 6, p1199-1203, 5p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501441294 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2009.2019739 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1199 Titles: – TitleFull: Performance Evaluation of GaAs-GaP Core-Shell-Nanowire Field-Effect Transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: He, Yuhui – PersonEntity: Name: NameFull: Zhao, Yuning – PersonEntity: Name: NameFull: Fan, Chun IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: June 2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 00189383 Numbering: – Type: volume Value: 56 – Type: issue Value: 6 Titles: – TitleFull: IEEE Transactions on Electron Devices Type: main |
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