Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.

Saved in:
Bibliographic Details
Title: Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.
Authors: Coleman, P. G., Burrows, C. P., Mahapatra, R.
Source: Journal of Applied Physics; July 1 2007, Vol. 102 Issue 1, p014106-014106, 1p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.2752129