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Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.

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Bibliographic Details
Title: Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.
Authors: Coleman, P. G., Burrows, C. P., Mahapatra, R.
Source: Journal of Applied Physics; July 1 2007, Vol. 102 Issue 1, p014106-014106, 1p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501446757
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.
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  Data: <searchLink fieldCode="AU" term="%22Coleman%2C+P%2E+G%2E%22">Coleman, P. G.</searchLink><br /><searchLink fieldCode="AU" term="%22Burrows%2C+C%2E+P%2E%22">Burrows, C. P.</searchLink><br /><searchLink fieldCode="AU" term="%22Mahapatra%2C+R%2E%22">Mahapatra, R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 1 2007, Vol. 102 Issue 1, p014106-014106, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501446757
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.2752129
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 014106
    Titles:
      – TitleFull: Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.
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            NameFull: Coleman, P. G.
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            NameFull: Burrows, C. P.
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            NameFull: Mahapatra, R.
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              Text: July 1 2007
              Type: published
              Y: 2007
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              Value: 102
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