The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.

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Bibliographic Details
Title: The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
Authors: Coleman, P. G., Harding, R. E., Davies, G.
Source: Journal of Materials Science: Materials in Electronics; July 2007, Vol. 18 Issue 7, p695-700, 6p
Database: Applied Science & Technology Source
Description
ISSN:09574522
DOI:10.1007/s10854-006-9080-9