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The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.

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Title: The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
Authors: Coleman, P. G., Harding, R. E., Davies, G.
Source: Journal of Materials Science: Materials in Electronics; July 2007, Vol. 18 Issue 7, p695-700, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501452128
AccessLevel: 2
PubType: Academic Journal
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  Data: The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; July 2007, Vol. 18 Issue 7, p695-700, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501452128
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      – Type: doi
        Value: 10.1007/s10854-006-9080-9
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 695
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      – TitleFull: The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si.
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            NameFull: Coleman, P. G.
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            NameFull: Harding, R. E.
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            NameFull: Davies, G.
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            – D: 01
              M: 07
              Text: July 2007
              Type: published
              Y: 2007
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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