Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
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| Title: | Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer. |
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| Authors: | Zhang, Gang, Lee, Seung-Hwan, Ra, Chang Ho |
| Source: | IEEE Transactions on Electron Devices; September 2009, Vol. 56 Issue 9, p1966-1973, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00189383 |
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| DOI: | 10.1109/TED.2009.2026090 |
