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Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.

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Bibliographic Details
Title: Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
Authors: Zhang, Gang, Lee, Seung-Hwan, Ra, Chang Ho
Source: IEEE Transactions on Electron Devices; September 2009, Vol. 56 Issue 9, p1966-1973, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501485411
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
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  Data: <searchLink fieldCode="AU" term="%22Zhang%2C+Gang%22">Zhang, Gang</searchLink><br /><searchLink fieldCode="AU" term="%22Lee%2C+Seung-Hwan%22">Lee, Seung-Hwan</searchLink><br /><searchLink fieldCode="AU" term="%22Ra%2C+Chang+Ho%22">Ra, Chang Ho</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; September 2009, Vol. 56 Issue 9, p1966-1973, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501485411
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TED.2009.2026090
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1966
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      – TitleFull: Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer.
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            NameFull: Zhang, Gang
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            NameFull: Lee, Seung-Hwan
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            NameFull: Ra, Chang Ho
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            – D: 01
              M: 09
              Text: September 2009
              Type: published
              Y: 2009
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              Value: 56
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              Value: 9
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            – TitleFull: IEEE Transactions on Electron Devices
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