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2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications.

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Bibliographic Details
Title: 2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications.
Authors: Refaat, Tamer F., Abedin, M. Nurul, Sulima, Oleg V.
Source: IEEE Transactions on Electron Devices; November 2007, Vol. 54 Issue 11, p2837-2842, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501506368
AccessLevel: 2
PubType: Academic Journal
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  Data: 2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications.
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  Data: <searchLink fieldCode="AU" term="%22Refaat%2C+Tamer+F%2E%22">Refaat, Tamer F.</searchLink><br /><searchLink fieldCode="AU" term="%22Abedin%2C+M%2E+Nurul%22">Abedin, M. Nurul</searchLink><br /><searchLink fieldCode="AU" term="%22Sulima%2C+Oleg+V%2E%22">Sulima, Oleg V.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; November 2007, Vol. 54 Issue 11, p2837-2842, 6p
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      – Code: eng
        Text: English
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        StartPage: 2837
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      – TitleFull: 2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications.
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            NameFull: Refaat, Tamer F.
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            NameFull: Abedin, M. Nurul
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            NameFull: Sulima, Oleg V.
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              Text: November 2007
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              Y: 2007
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