APA (7th ed.) Citation

Cagnat, N., Mathiot, D., & Laviron, C. (2007). Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location. Journal of Applied Physics, 102(10), 106102. https://doi.org/10.1063/1.2811726

Chicago Style (17th ed.) Citation

Cagnat, N., D. Mathiot, and C. Laviron. "Ultrathin N+/p Junction in Preamorphized Silicon by Phosphorus and Carbon Coimplantation Engineering: Influence of C Location." Journal of Applied Physics 102, no. 10 (2007): 106102. https://doi.org/10.1063/1.2811726.

MLA (9th ed.) Citation

Cagnat, N., et al. "Ultrathin N+/p Junction in Preamorphized Silicon by Phosphorus and Carbon Coimplantation Engineering: Influence of C Location." Journal of Applied Physics, vol. 102, no. 10, 2007, p. 106102, https://doi.org/10.1063/1.2811726.