Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location.
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| Title: | Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location. |
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| Authors: | Cagnat, N., Mathiot, D., Laviron, C. |
| Source: | Journal of Applied Physics; November 15 2007, Vol. 102 Issue 10, p106102-106102, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.2811726 |
