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Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.

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Bibliographic Details
Title: Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.
Authors: Coluzza, C., Lama, F., Frova, A.
Source: Journal of Applied Physics; September 15 1988, Vol. 64, p3304-3306, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501582613
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.
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  Data: <searchLink fieldCode="AU" term="%22Coluzza%2C+C%2E%22">Coluzza, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Lama%2C+F%2E%22">Lama, F.</searchLink><br /><searchLink fieldCode="AU" term="%22Frova%2C+A%2E%22">Frova, A.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 15 1988, Vol. 64, p3304-3306, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501582613
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.341506
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 3304
    Titles:
      – TitleFull: Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.
        Type: main
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          Name:
            NameFull: Coluzza, C.
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            NameFull: Lama, F.
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            NameFull: Frova, A.
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          Dates:
            – D: 15
              M: 09
              Text: September 15 1988
              Type: published
              Y: 1988
          Identifiers:
            – Type: issn-print
              Value: 00218979
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              Value: 64
          Titles:
            – TitleFull: Journal of Applied Physics
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