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Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates.

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Bibliographic Details
Title: Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates.
Authors: Hsu, William, Peng, Cheng-Yi, Lin, Cheng-Ming
Source: IEEE Electron Device Letters; May 2010, Vol. 31 Issue 5, p422-424, 3p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501602764
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PubType: Academic Journal
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  Data: Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates.
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  Data: <searchLink fieldCode="AU" term="%22Hsu%2C+William%22">Hsu, William</searchLink><br /><searchLink fieldCode="AU" term="%22Peng%2C+Cheng-Yi%22">Peng, Cheng-Yi</searchLink><br /><searchLink fieldCode="AU" term="%22Lin%2C+Cheng-Ming%22">Lin, Cheng-Ming</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; May 2010, Vol. 31 Issue 5, p422-424, 3p
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      – Type: doi
        Value: 10.1109/LED.2010.2044013
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 422
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      – TitleFull: Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates.
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            NameFull: Hsu, William
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            NameFull: Peng, Cheng-Yi
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            NameFull: Lin, Cheng-Ming
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              Text: May 2010
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              Y: 2010
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