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Charge trapping in quantum dot memory devices with different dot densities.

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Bibliographic Details
Title: Charge trapping in quantum dot memory devices with different dot densities.
Authors: Kannan, E. S., Kim, GiI-Ho, Ritchie, D. A.
Source: Journal of Physics: D Applied Physics; June 9 2010, Vol. 43 Issue 22, p225101-1-225101-6, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501623698
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Charge trapping in quantum dot memory devices with different dot densities.
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  Data: <searchLink fieldCode="AU" term="%22Kannan%2C+E%2E+S%2E%22">Kannan, E. S.</searchLink><br /><searchLink fieldCode="AU" term="%22Kim%2C+GiI-Ho%22">Kim, GiI-Ho</searchLink><br /><searchLink fieldCode="AU" term="%22Ritchie%2C+D%2E+A%2E%22">Ritchie, D. A.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Physics%3A+D+Applied+Physics%22">Journal of Physics: D Applied Physics</searchLink>; June 9 2010, Vol. 43 Issue 22, p225101-1-225101-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501623698
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/0022-3727/43/22/225101
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 225101-1
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      – TitleFull: Charge trapping in quantum dot memory devices with different dot densities.
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            NameFull: Kannan, E. S.
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            NameFull: Kim, GiI-Ho
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            NameFull: Ritchie, D. A.
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              M: 06
              Text: June 9 2010
              Type: published
              Y: 2010
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              Value: 43
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