APA (7th ed.) Citation

Yew, T., & Reif, R. (1989). Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2. Journal of Applied Physics, 65, 2500. https://doi.org/10.1063/1.342796

Chicago Style (17th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "Selective Silicon Epitaxial Growth at 800°C by Ultralow-pressure Chemical Vapor Deposition Using SiH4 and SiH4/H2." Journal of Applied Physics 65 (1989): 2500. https://doi.org/10.1063/1.342796.

MLA (9th ed.) Citation

Yew, Tri-Rung, and Rafael Reif. "Selective Silicon Epitaxial Growth at 800°C by Ultralow-pressure Chemical Vapor Deposition Using SiH4 and SiH4/H2." Journal of Applied Physics, vol. 65, 1989, p. 2500, https://doi.org/10.1063/1.342796.