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Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.

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Bibliographic Details
Title: Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Journal of Applied Physics; March 15 1989, Vol. 65, p2500-2507, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501633968
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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  Data: <searchLink fieldCode="AU" term="%22Yew%2C+Tri-Rung%22">Yew, Tri-Rung</searchLink><br /><searchLink fieldCode="AU" term="%22Reif%2C+Rafael%22">Reif, Rafael</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 15 1989, Vol. 65, p2500-2507, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501633968
RecordInfo BibRecord:
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        Value: 10.1063/1.342796
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 2500
    Titles:
      – TitleFull: Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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            NameFull: Yew, Tri-Rung
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            NameFull: Reif, Rafael
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            – D: 15
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              Text: March 15 1989
              Type: published
              Y: 1989
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              Value: 00218979
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              Value: 65
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            – TitleFull: Journal of Applied Physics
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