Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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| Title: | Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2. |
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| Authors: | Yew, Tri-Rung, Reif, Rafael |
| Source: | Journal of Applied Physics; March 15 1989, Vol. 65, p2500-2507, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.342796 |
