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Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.

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Bibliographic Details
Title: Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Journal of Applied Physics; March 15 1989, Vol. 65, p2500-2507, 8p
Database: Applied Science & Technology Source
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