On residual carbon acceptors in molecular-beam epitaxial GaAs.

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Bibliographic Details
Title: On residual carbon acceptors in molecular-beam epitaxial GaAs.
Authors: Kerr, T. M., Wood, C. E. C., Newstead, S. M.
Source: Journal of Applied Physics; April 1 1989, Vol. 65, p2673-2676, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501638068
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PubType: Academic Journal
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  Data: On residual carbon acceptors in molecular-beam epitaxial GaAs.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; April 1 1989, Vol. 65, p2673-2676, 4p
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.342750
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 2673
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      – TitleFull: On residual carbon acceptors in molecular-beam epitaxial GaAs.
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          Name:
            NameFull: Kerr, T. M.
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            NameFull: Wood, C. E. C.
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            NameFull: Newstead, S. M.
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              Text: April 1 1989
              Type: published
              Y: 1989
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              Value: 65
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            – TitleFull: Journal of Applied Physics
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