The hole photoionization cross section of EL2 in GaAs1-xPx.

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Bibliographic Details
Title: The hole photoionization cross section of EL2 in GaAs1-xPx.
Authors: Silverberg, P., Omling, P., Samuelson, L.
Source: Journal of Applied Physics; May 1 1989, Vol. 65, p3721-3723, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501646842
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: The hole photoionization cross section of EL2 in GaAs1-xPx.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 1 1989, Vol. 65, p3721-3723, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501646842
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.342603
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 3
        StartPage: 3721
    Titles:
      – TitleFull: The hole photoionization cross section of EL2 in GaAs1-xPx.
        Type: main
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            NameFull: Silverberg, P.
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            NameFull: Omling, P.
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            NameFull: Samuelson, L.
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            – D: 01
              M: 05
              Text: May 1 1989
              Type: published
              Y: 1989
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              Value: 65
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            – TitleFull: Journal of Applied Physics
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