APA (7th ed.) Citation

Duguay, S., Colin, A., & Mathiot, D. (2010). Atomic-scale redistribution of dopants in polycrystalline silicon layers. Journal of Applied Physics, 107(8), 034911-1. https://doi.org/10.1063/1.3466783

Chicago Style (17th ed.) Citation

Duguay, S., A. Colin, and D. Mathiot. "Atomic-scale Redistribution of Dopants in Polycrystalline Silicon Layers." Journal of Applied Physics 107, no. 8 (2010): 034911-1. https://doi.org/10.1063/1.3466783.

MLA (9th ed.) Citation

Duguay, S., et al. "Atomic-scale Redistribution of Dopants in Polycrystalline Silicon Layers." Journal of Applied Physics, vol. 107, no. 8, 2010, pp. 034911-1, https://doi.org/10.1063/1.3466783.